Title :
Mismatch effects explained by the spectral model [MOS devices]
Author :
Oehm, Jurgen ; Grunebaum, U. ; Schumacher, Klaus
Author_Institution :
AG Mikroelektronik, Dortmund Univ., Germany
Abstract :
The currently available first order mismatch models cannot explain many of the observed effects. The physical modelling approach of the spectral model described in this paper gives a very precise description of actual mismatch behaviour in a closed form and leads to a deeper understanding. Together with small geometry considerations a very good prediction of mismatch effects for a wide range of layout structures can be obtained, which are verified by measurements
Keywords :
MOS integrated circuits; MOSFET; integrated circuit layout; integrated circuit modelling; semiconductor device models; MOS devices; closed form; layout structures; mismatch effects; physical modelling approach; small geometry considerations; spectral model; Circuit noise; Circuit synthesis; Circuit topology; Convolution; Frequency; Geometry; MOSFETs; Semiconductor device modeling; Threshold voltage; Transfer functions;
Conference_Titel :
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location :
Pafos
Print_ISBN :
0-7803-5682-9
DOI :
10.1109/ICECS.1999.813415
