Time-domain electromagnetic-physics-based modeling of complex microwave structures

We present results and analysis of electromagnetic physical modeling of multifinger transistors, based on a newly developed time-domain numerical technique. Different examples are presented showing that accurate modeling of high-frequency advantages of multifinger transistors over single-finger transistors are underlined. The objective of this paper is to report an enhanced version of a previously developed multiresolution time-domain technique and also apply it for electromagnetic-physical modelling of multifinger transistors. Work is being done now to obtain S-parameters using the proposed technique and compare it with measurements.