Title :
A 40-Gb/s Decision Circuit in 90-nm CMOS
Author :
Chalvatzis, T. ; Yau, K.H.K. ; Schvan, P. ; Yang, M.T. ; Voinigescu, S.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
Abstract :
A low-power 40-Gb/s decision circuit for fiber-optic and mm-wave analog-to-digital converter applications was implemented in two 90-nm processes from two different foundries. The circuit uses a MOS-CML master-slave latch topology with only two vertically stacked transistors. It combines low and high-VT MOSFETs to allow for operation from a 1.2-V supply, without compromising speed. Full-rate retiming with jitter reduction and 7 ps rise/fall times is demonstrated at 37 Gb/s and 40 Gb/s from 1.2 V and 1.5 V, respectively. The entire decision circuit dissipates 130 mW from 1.2 V, with a record low power consumption of 10.8 mW per latch
Keywords :
CMOS logic circuits; MOSFET circuits; analogue-digital conversion; current-mode logic; decision circuits; integrated optoelectronics; network topology; 1.2 V; 1.5 V; 10.8 mW; 130 mW; 37 Gbit/s; 40 Gbit/s; 7 ps; 90 nm; CMOS technology; MOS-CML; decision circuit; fiber optic; full-rate retiming; high-VT MOSFET; master-slave latch topology; mm-wave analog-to-digital converter; vertically stacked transistors; Circuits; Clocks; Current density; Flip-flops; Intrusion detection; Latches; MOSFETs; Switches; Topology; Transformers; Decision circuit; MOS-CML; retiming D flip-flop;
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0303-0
DOI :
10.1109/ESSCIR.2006.307502