DocumentCode :
3492341
Title :
40-Gb/s Transimpedance Amplifier in 0.18-μm CMOS Technology
Author :
Jin, Jun-De ; Hsu, Shawn S H
Author_Institution :
Dept. of Electr. Eng. & Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
fYear :
2006
fDate :
19-21 Sept. 2006
Firstpage :
520
Lastpage :
523
Abstract :
A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From the measured S-parameters, a transimpedance gain of 51.0 dBΩ and a 3-dB bandwidth up to 30.5 GHz (~0.5 fT) were observed. To the best of authors´ knowledge, the TIA presents the widest bandwidth and highest GBP/Pdc of 180.1 GHzΩ/mW among the published results with similar technologies. A new bandwidth enhancement technique, π-type inductor peaking (PIP), is proposed, which gives a bandwidth enhancement factor of 3.31 without disturbing the low-frequency gain. Under a 1.8 V supply voltage, the TIA consumes 60.1 mW with a chip area of 1.17 x 0.46 mm2.
Keywords :
CMOS integrated circuits; S-parameters; inductors; millimetre wave amplifiers; 0.18 micron; 1.8 V; 3 dB; 40 Gbit/s; 60.1 mW; CMOS technology; S parameters; TIA; bandwidth enhancement technique; pi-type inductor peaking; transimpedance amplifier; transimpedance gain; Bandwidth; CMOS technology; Capacitance; Circuits; Degradation; Gain measurement; Inductors; Optical fiber communication; Voltage; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
ISSN :
1930-8833
Print_ISBN :
1-4244-0303-0
Type :
conf
DOI :
10.1109/ESSCIR.2006.307504
Filename :
4099818
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3492341
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