A 150mA Low Noise, High PSRR Low-Dropout Linear Regulator in 0.13μm Technology for RF SoC Applications

Author

Wong, Kae ; Evans, David

Author_Institution

Wireless Analog Technol. Center, Texas Instrum., Dallas, TX

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

532

Lastpage

535

Abstract

An integrated low-noise, high power supply rejection ratio (PSRR), low-dropout (LDO) linear regulator has been developed in Texas Instruments´ (TI) 130nm CMOS technology. The LDO regulator is capable of producing a regulated output voltage of 2.8 V from a Li-ion battery supply, with a dropout voltage of 200 mV while supplying a load current of 150 mA. The LDO regulator features > 65 dB PSRR at 20 kHz, and > 40 dB up to 1 MHz. The LDO regulator also features output noise performance of < 350 nV_rms/radicHz at 100Hz. The LDO die area is 0.166 mm² and the maximum no-load power consumption is 450μW.

Keywords

CMOS integrated circuits; radiofrequency integrated circuits; secondary cells; system-on-chip; voltage regulators; 0.13 micron; 130 nm; 150 mA; 2.8 V; 200 mV; 450 muW; CMOS technology; LDO regulator; Li-ion battery supply; PSRR; RF SoC applications; high power supply rejection ratio; low-dropout linear regulator; CMOS technology; Capacitors; Energy management; FETs; Instruments; Integrated circuit technology; Power supplies; Radio frequency; Regulators; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307507

Filename

4099821