Title :
Mid-IR type-II interband cascade lasers with quantum efficiency exceeding 450%
Author :
Bruno, J.D. ; Yang, Rui Q. ; Bradshaw, J.L. ; Pham, J.T. ; Wortman, D.E.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Summary form only given. We obtain the highest peak power yet reported among any mid-IR semiconductor diode lasers at emission wavelengths beyond 3 μm. Note also that the power values reported here have been corrected only for the transmission coefficients of the collection optics and not corrected for beam divergence. If the spatial divergence of the laser beam is taken into account, the actual emitted powers and differential external quantum efficiency (DEQE) would be considerably higher
Keywords :
infrared sources; laser transitions; quantum well lasers; 3 mum; 450 percent; actual emitted powers; beam divergence; collection optics; differential external quantum efficiency; emission wavelengths; highest peak power; mid-IR semiconductor diode lasers; mid-IR type-II interband cascade lasers; quantum efficiency; spatial divergence; transmission coefficients; Electrons; Laser transitions; Optical scattering; Power generation; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature dependence; Threshold current;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813452
