Title :
Present status of InGaN-based violet laser diodes
Author_Institution :
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
Abstract :
InGaN-GaN-AlGaN SCH MQW LDs were fabricated on an epitaxially laterally overgrown GaN (ELOG) substrate grown by MOCVD. The LDs with cleaved mirror facets showed an output power as high as 40 mW under RT-CW operation with a stable fundamental transverse mode. The lifetime of the LDs at a constant output power of 30 mW was 400-500 hours under CW operation at an ambient temperature of 60 C
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; laser mirrors; laser modes; life testing; optical fabrication; semiconductor device testing; semiconductor lasers; vapour phase epitaxial growth; 30 mW; 400 to 500 h; 60 C; CW operation; InGaN-GaN-AlGaN; InGaN-GaN-AlGaN SCH MQW laser diode fabrication; InGaN-based violet laser diodes; MOCVD; RT-CW operation; ambient temperature; cleaved mirror facets; constant output power; epitaxially laterally overgrown GaN substrate; output power; stable fundamental transverse mode; Chemical lasers; DVD; Diode lasers; Epitaxial layers; Gallium nitride; Laser modes; Power generation; Power lasers; Substrates; Threshold current;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813461
