Title :
Growth and characterization of ultra-thin GaNxAs1-x on GaAs substrate by plasma-assisted molecular beam epitaxy
Author :
Pan, Z. ; Li, L.H. ; Zhang, W. ; Lin, Y.W. ; Zhou, Z.Q. ; Wu, R.H.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
We investigate the growth of ultrathin GaNAs on GaAs by a plasma-assisted MBE. The evolution of surface reconstruction, strain relaxation and optical properties have been studied by RHEED, high-resolution X-ray diffraction and photoluminescence measurements
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; molecular beam epitaxial growth; optical films; photoluminescence; reflection high energy electron diffraction; surface reconstruction; GaAs; GaAs substrate; GaNAs; RHEED; high-resolution X-ray diffraction; optical properties; photoluminescence measurements; plasma-assisted MBE; plasma-assisted molecular beam epitaxy; strain relaxation; surface reconstruction; ultra-thin GaNxAs1-x; ultrathin GaNAs; Gallium arsenide; Gallium nitride; Optical diffraction; Photoluminescence; Plasma measurements; Plasma properties; Plasma x-ray sources; Strain measurement; Surface reconstruction; X-ray diffraction;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813462
