Title :
Computer simulation of a-Si:H p-i-n and tandem solar cells current density
Author :
Darkwi, A.Y. ; Ibrahim, K.
Author_Institution :
Sch. of Phys., Univ. of Sci., Penang, Malaysia
Abstract :
Computer simulation of the J-V characteristic curve for single p-i-n a-Si:H and tandem solar cells (a-Si:H/a-Si:H) have been investigated by solving Poisson´s equation and continuity equations for charge carriers. In particular, an implicit gap state density in the current voltage characteristic for the tandem solar cell was introduced. The evaluated current density considered both the diffusion and drift contribution in each cell. It has been shown from this simulation that optimization of photovoltaic performance can be investigated through the input parameters. This simulation is useful for modeling tandem structure solar cells
Keywords :
Newton method; amorphous semiconductors; current density; digital simulation; elemental semiconductors; finite difference methods; hydrogen; semiconductor device models; silicon; solar cells; J-V characteristic curve; Newton method; Poisson equation; Si:H; a-Si:H p-i-n solar cells; a-Si:H tandem solar cells; charge carrier continuity equations; computer simulation; current density; current voltage characteristic; diffusion contribution; drift contribution; finite difference method; implicit gap state density; photovoltaic performance optimization; tandem structure solar cells; Charge carrier processes; Charge carriers; Computer simulation; Costs; Current density; Electron mobility; PIN photodiodes; Photovoltaic cells; Physics; Poisson equations;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616465
