Title :
A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors
Author :
Decoutere, S. ; Simoen, E. ; Vancuyck, G. ; Deferm, L. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A unified approach is presented and experimentally validated for the modeling of hot-carrier degradation of the DC current gain and 1/f noise of bipolar transistors under reverse emitter/base stress conditions
Keywords :
1/f noise; bipolar transistors; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device noise; silicon; 1/f noise; DC current gain; Si; hot-carrier degradation; modeling; polysilicon emitter bipolar transistors; reverse emitter/base stress conditions; unified approach; Acoustical engineering; Bipolar transistors; Degradation; Equations; Hot carriers; Integrated circuit modeling; Integrated circuit noise; Predictive models; Stress; Tunneling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647406
