Title :
InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect
Author :
Kageshima, H. ; Iwamoto, Satoshi ; Nishioka, M. ; Someya, T. ; Miyazaki, H. ; Fukutani, K. ; Arakawa, Y. ; Yasui, I. ; Shimura, T. ; Kuroda, K.
Author_Institution :
Dept. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We demonstrated an InGaAs-GaAs photorefractive MQW device with quantum confined Stark effect (QCSE) for the first time. The maximum diffraction efficiency is 2x10-4. This value is 100 times smaller than the expected one. This disagreement indicates the effect of the lateral transport
Keywords :
carrier mobility; gallium arsenide; indium compounds; photorefractive materials; quantum confined Stark effect; semiconductor quantum wells; InGaAs-GaAs; InGaAs-GaAs photorefractive MQW device; InGaAs/GaAs photorefractive quantum well device; lateral transport effects; maximum diffraction efficiency; quantum confined Stark effect; Absorption; Dielectrics; Diffraction; Gallium arsenide; Indium gallium arsenide; Photorefractive effect; Photorefractive materials; Potential well; Quantum well devices; Stark effect;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813480
