Abstract :
The following topics are dealt with: high performance MOSFET; electron transport and noise; advance gate stack; MEMS; microsensors; novel gate-stack CMOS solutions; advanced nanoscale device transport models; RF passive integration; carbon nanotubes; memory circuits; NVM high-K dielectrics; high voltage devices; injection devices; transport devices; imagers; light emitting devices; process integration; carrier mobility in multi-gate devices; multigate devices; high-K and low-K dielectrics; DRAM; flash memory; gate stack modeling; dielectric modeling
Keywords :
CMOS integrated circuits; DRAM chips; MOSFET; carbon nanotubes; carrier mobility; dielectric devices; dielectric materials; flash memories; microsensors; CMOS; DRAM; MEMS; RF passive integration; advance gate stack; carbon nanotubes; carrier mobility; electron transport; flash memory; high K dielectrics; high performance MOSFET; light emitting devices; low K dielectrics; microsensors; multigate devices; nanoscale devices; process integration;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307620
