Title :
High performance InGaAs/InGaAsP/AlGaAs diode lasers (λ=0.98 μm) grown by MOCVD
Author :
Yang, Guowen ; Hwu, R. Jennifer ; Chern, J.H. ; Sadwick, Larry ; Xu, Z.T.
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
We have successfully fabricated high performance 0.98 μm InGaAs-InGaAsP-AlGaAs diode lasers. This material system demonstrated the advantages of flexibility in structure design, simple epitaxial growth, improvement of surface morphology, low vertical beam divergence, high efficiency, high characteristic temperature, and superior reliability
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser reliability; laser transitions; optical fabrication; semiconductor lasers; 0.98 mum; InGaAs-InGaAsP-AlGaAs; InGaAs-InGaAsP-AlGaAs diode lasers; InGaAs/InGaAsP/AlGaAs diode lasers; MOCVD growth; high characteristic temperature; high efficiency; laser reliability; low vertical beam divergence; simple epitaxial growth; structure design; surface morphology; Diode lasers; Indium gallium arsenide; MOCVD; Morphology; Optical materials; Optical refraction; Optical variables control; Optical waveguides; Power system reliability; Quantum well lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813484
