Title :
Dielectric spectroscopy of semiconductors
Author_Institution :
R. Holloway & Bedford New Coll., London Univ., Egham, UK
Abstract :
The author proposes an interpretation of the dielectric response of semiconductors in terms of a screened hopping model relating both to the horizontal transitions in bulk material and to the vertical transitions in space charge regions and at interfaces. This appears to be the only general model consistent with the totality of experimental observations on semiconductors that opens up a new field of theoretical investigations into the nature of electronic transitions in semiconductors and similar materials. It also provides a link with the new interpretation of the more general dielectric response of solids
Keywords :
dielectric losses; dielectric properties of solids; electron traps; hopping conduction; semiconductors; space charge; dielectric response; horizontal transitions; interfaces; screened hopping model; semiconductors; space charge regions; vertical transitions; Capacitance measurement; Dielectric losses; Dielectric measurements; Educational institutions; Electrochemical impedance spectroscopy; Electron traps; Frequency dependence; Frequency measurement; Frequency response; Shape;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on
Conference_Location :
Ottawa, Ont.
DOI :
10.1109/CEIDP.1988.26331
