Title :
AlGaN-based UV detectors and applications
Author :
Muñoz, E. ; Monroy, E. ; Calle, F. ; Calleja, E. ; Omnès, F. ; Beaumont, B. ; Gibart, P.
Author_Institution :
ETSI Telecomunicacion, Univ. Politecnica de Madrid, Spain
Abstract :
The state of the art in the fabrication and characteristics of AlGaN photoconductors, Schottky barrier, p-n junction and metal-semiconductor-metal UV photodetectors will be presented
Keywords :
III-V semiconductors; MOCVD; Schottky diodes; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; optical fabrication; semiconductor growth; ultraviolet detectors; vapour phase epitaxial growth; AlGaN; AlGaN photoconductors; AlGaN-based UV detectors; MBE growth; MOVPE growth; MSM UV photodetectors; Schottky barrier; metal-semiconductor-metal UV photodetectors; optical fabrication; p-n junction; Aluminum gallium nitride; Artificial intelligence; Detectors; Fires; Gallium nitride; Monitoring; Photoconductivity; Photodetectors; Photodiodes; Photonic band gap;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813494
