Title :
Studies of the band-edge emission mechanism in the InGaN blue LED
Author :
Wang, Xiaojun ; Choa, Fow-Sen ; Liu, Feng ; Worchersky, T.L.
Author_Institution :
Dept. of Comput. Sci., Maryland Univ., Baltimore, MD, USA
Abstract :
We explore the dominant mechanism for the UV band edge emission. The LEDs used in this work are the NICHIA double hetero-structure blue LEDs with an InGaN active layer
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; InGaN; InGaN active layer; InGaN blue LED; LED; NICHIA double hetero-structure blue LED; UV band edge emission; band-edge emission mechanism; dominant mechanism; Computer science; Equations; Excitons; Gallium nitride; Light emitting diodes; Optical pulses; Optical saturation; Optical scattering; Stimulated emission; Temperature measurement;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813495
