• DocumentCode
    349279
  • Title

    Studies of the band-edge emission mechanism in the InGaN blue LED

  • Author

    Wang, Xiaojun ; Choa, Fow-Sen ; Liu, Feng ; Worchersky, T.L.

  • Author_Institution
    Dept. of Comput. Sci., Maryland Univ., Baltimore, MD, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    98
  • Abstract
    We explore the dominant mechanism for the UV band edge emission. The LEDs used in this work are the NICHIA double hetero-structure blue LEDs with an InGaN active layer
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; InGaN; InGaN active layer; InGaN blue LED; LED; NICHIA double hetero-structure blue LED; UV band edge emission; band-edge emission mechanism; dominant mechanism; Computer science; Equations; Excitons; Gallium nitride; Light emitting diodes; Optical pulses; Optical saturation; Optical scattering; Stimulated emission; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.813495
  • Filename
    813495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349279