DocumentCode
349280
Title
Coupling of InGaN quantum well photoluminescence to silver surface plasmons
Author
Gontijo, I. ; Boroditsky, M. ; Yablonovitch, E. ; Keller, S. ; Mishra, U.K. ; Den Baars, Steve P. ; Krames, M.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
100
Abstract
The coincidence of surface plasmon energy on silver and the GaN bandgap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. External efficiency of LEDs could be improved by this process
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; spontaneous emission; surface plasmons; Ag; GaN; GaN bandgap; InGaN quantum well photoluminescence; LEDs; external efficiency; metal surface plasmons; semiconductor spontaneous emission; silver surface plasmons; surface plasmon energy; Electrons; Frequency; Gallium nitride; Materials science and technology; Optical reflection; Photoluminescence; Photonic band gap; Plasmons; Silver; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-5634-9
Type
conf
DOI
10.1109/LEOS.1999.813496
Filename
813496
Link To Document