Title :
Perspective of Low-Power and High-Speed Wireless Inter-Chip Communications for SiP Integration
Author :
Kuroda, Tadahiro ; Miura, Noriyuki
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama
Abstract :
Performance gap between computation in a chip and communication between chips is widening. "System in a package" (SiP) reduces chip distance significantly, enabling a high-speed and low-power interface. Electrical non-contact interfaces using inductive/capacitive coupling have advantages over mechanical interfaces employing through silicon vias (TSV) and micro bumps. In this paper, a perspective of using wireless links between stacked chips in a package is presented. Techniques for high-speed and low-power data communications are discussed in various levels from signaling, circuit design, IC layout, and magnetic field design, as well as cross talk analysis and its countermeasures. A 1 Tb/s 3W transceiver in 0.18mum CMOS is presented. Both clock and data are transmitted by inductive coupling. 1024 data transceivers are arranged with a pitch of 30mum. A 4-phases time division multiple access (TDMA) technique reduces crosstalk effectively. Measured bit error rate (BER) is lower than 10-13. Bi-phase modulation (BPM) is employed to improve noise immunity, resulting in power reduction
Keywords :
CMOS integrated circuits; crosstalk; high-speed integrated circuits; low-power electronics; mobile communication; radio access networks; system-in-package; transceivers; 0.18 micron; 3 W; 30 micron; CMOS; bi phase modulation; bit error rate; crosstalk analysis; data transceivers; high speed data communications; inductive coupling; low power communications; low power data communications; noise immunity; stacked chips; system in a package; time division multiple access; transceiver; wireless inter chip communications; Bit error rate; Coupling circuits; Crosstalk; Data communication; Packaging; Silicon; Through-silicon vias; Time division multiple access; Transceivers; Wireless communication;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307629