Title :
Heterogeneous integration of GaAs-based lasers with GaN-based light sources
Author :
Floyd, P.D. ; Anderson, G.B. ; Romano, L.T. ; Treat, D.W. ; Bour, D.P.
Author_Institution :
Electr. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
Abstract :
Summary form only given. Wafer fusion of GaAs-based laser heterostructures to GaN heterostructures has been demonstrated. Using red/infrared laser heterostructures fused to GaN-based LED material, closely spaced (50 μm) red and infrared lasers were operated along with adjacent blue LEDs, forming a monolithic multiwavelength array of light emitters
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; light emitting diodes; optical fabrication; semiconductor lasers; 50 mum; GaAs-based lasers; GaN; GaN heterostructures; GaN-based LED material; GaN-based light sources; adjacent blue LEDs; heterogeneous integration; monolithic multiwavelength light emitter array; red/infrared laser heterostructures; wafer fusion; Gallium nitride; Laser fusion; Light emitting diodes; Light sources; Optical materials; Optical pulses; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813498
