Nanotransistors: A Bottom-Up View

Author

Lundstrom, Mark

Author_Institution

Network for Computational Nanotechnology, Purdue Univ., West Lafayette, IN

fYear

2006

fDate

Sept. 2006

Firstpage

33

Lastpage

40

Abstract

This talk describes how new understanding of conduction at the molecular scale can inform nanoscale MOSFET device engineering. A ´bottom-up´ approach developed to explain conduction in molecules will be applied to the analysis of nanotransistors. The generalization of the simple approach to a rigorous treatment of quantum transport with dissipation will be introduced. Some results on the ultimate silicon MOSFET, the carbon nanotube MOSFET, and the possibility of molecular transistors will be discussed. The objective is to convey the essence of the approach and to demonstrate its ability to simply and clearly described the nanoscale MOSFET

Keywords

MOSFET; carbon nanotubes; elemental semiconductors; nanotechnology; silicon; Si; carbon nanotube MOSFET; conduction; molecular scale; molecular transistors; nanotransistors; quantum transport; silicon MOSFET; CMOS technology; Computer networks; Electrons; Extraterrestrial measurements; MOSFET circuits; Molecular electronics; Nanoscale devices; Nanotechnology; Scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307633

Filename

4099851