Nanotransistors: A Bottom-Up View

This talk describes how new understanding of conduction at the molecular scale can inform nanoscale MOSFET device engineering. A ´bottom-up´ approach developed to explain conduction in molecules will be applied to the analysis of nanotransistors. The generalization of the simple approach to a rigorous treatment of quantum transport with dissipation will be introduced. Some results on the ultimate silicon MOSFET, the carbon nanotube MOSFET, and the possibility of molecular transistors will be discussed. The objective is to convey the essence of the approach and to demonstrate its ability to simply and clearly described the nanoscale MOSFET