Title :
Quasi-phase-matched devices using sublattice-reversed semiconductor heterostructures
Author :
Ito, Ryoichi ; Koh, Shinji ; Kondo, Takashi
Author_Institution :
Dept. of Phys., Meiji Univ., Kawasaki, Japan
Abstract :
We propose a novel technique to realize quasi-phase-matched structures using compound semiconductors based on sublattice-reversal epitaxy, in which the sublattices of the zinc-blende structure are interchanged in the process of epitaxy. Sublattice-reversal epitaxy has been demonstrated in GaAs-Si-GaAs (100), GaP-Si-GaP (100), GaAs-Ge-GaAs (100) and GaAs-Ge-GaAs (111) systems
Keywords :
molecular beam epitaxial growth; optical materials; optical phase matching; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; GaAs-Ge-GaAs; GaAs-Si-GaAs; GaP-Si-GaP; compound semiconductors; quasi-phase-matched devices; sublattice-reversal epitaxy; sublattice-reversed semiconductor heterostructures; zinc-blende structure; Atomic layer deposition; Epitaxial growth; Frequency conversion; Gallium arsenide; Molecular beam epitaxial growth; Nonlinear optical devices; Nonlinear optics; Optical films; Optical modulation; Substrates;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813507
