Title :
10W X-band AlGaN/GaN MMIC
Author :
Zhang, Z.G. ; Feng, Z. ; Wu, J.B. ; Wang, Y. ; Feng, Z.H. ; Hu, Z.H. ; Cai, S.J.
Author_Institution :
Hebei Semicond. Res. Inst., Shijiazhuang
Abstract :
A two-stage AlGaN/GaN MMIC on high pure SiC (HP-SiC) substrate for X band frequency was designed and manufactured. The MMIC had a CW output power of over 10W, 12dB power gain from 9.1GHz to 10.GHz and with a gain flatness of 0.3dB.
Keywords :
MMIC; aluminium compounds; AlGaN-GaN; CW output power; X band frequency; X-band MMIC; frequency 9.1 GHz to 10 GHz; gain 0.3 dB; gain 12 dB; power 10 W; Aluminum gallium nitride; Circuits; Frequency; Gallium nitride; HEMTs; MMICs; Power generation; Pulse measurements; Silicon carbide; Substrates;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958638
