• DocumentCode
    3492919
  • Title

    10W X-band AlGaN/GaN MMIC

  • Author

    Zhang, Z.G. ; Feng, Z. ; Wu, J.B. ; Wang, Y. ; Feng, Z.H. ; Hu, Z.H. ; Cai, S.J.

  • Author_Institution
    Hebei Semicond. Res. Inst., Shijiazhuang
  • fYear
    2008
  • fDate
    16-20 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A two-stage AlGaN/GaN MMIC on high pure SiC (HP-SiC) substrate for X band frequency was designed and manufactured. The MMIC had a CW output power of over 10W, 12dB power gain from 9.1GHz to 10.GHz and with a gain flatness of 0.3dB.
  • Keywords
    MMIC; aluminium compounds; AlGaN-GaN; CW output power; X band frequency; X-band MMIC; frequency 9.1 GHz to 10 GHz; gain 0.3 dB; gain 12 dB; power 10 W; Aluminum gallium nitride; Circuits; Frequency; Gallium nitride; HEMTs; MMICs; Power generation; Pulse measurements; Silicon carbide; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008. APMC 2008. Asia-Pacific
  • Conference_Location
    Macau
  • Print_ISBN
    978-1-4244-2641-6
  • Electronic_ISBN
    978-1-4244-2642-3
  • Type

    conf

  • DOI
    10.1109/APMC.2008.4958638
  • Filename
    4958638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3492919