D-band amplifier using metamorphic HEMT technology

In this paper, we successfully demonstrated the D-band MMIC amplifiers based on 0.1 mum InGaAs/InAlAs/GaAs MHEMT which has two fingers of 30 mum gate width. The device exhibited a cut-off frequency (f_T) of 189 GHz, and a maximum oscillation frequency (f_max) of 334 GHz. The D-band MMIC amplifier exhibited a good RF gains of 7.8 dB at a frequency of 110 GHz. Actually, the D-band MMIC amplifiers exhibited the S₂₁ gains of at 140 GHz in Momentum simulation. We try to measure a frequency range of 110-140 GHz because our measurement equipment can measure in a frequency range of 0.1-110 GHz. Proceeding from these results, we expect satisfactory results in S₂₁ gain performance at 140 GHz.