DocumentCode
3492944
Title
Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure
Author
Liu, W.F. ; Guan, Junzhi ; Bian, J.M. ; Zhao, Yiwen ; Liu, Y.H. ; Zhang, B.Y. ; Liu, A.M.
Author_Institution
Sch. of Physic & Optoelectron. Technol., Dalian Univ. of Technol., Dalian, China
fYear
2012
fDate
23-25 Aug. 2012
Firstpage
407
Lastpage
411
Abstract
The electrolyte/Si solar cell structure is proposed to investigate single field-effect surface passivation. The electrolyte-induced extra electrostatic field under the surface of Si solar cell can be controlled by adjusting voltages between the electrolyte and the surfaces of Si solar cell. Under positive gate voltages, an electron accumulation layer was formed under the electrolyte/Si interface leading to surface passivation of Si solar cell. Our results indicate that the proposed electrolyte/Si solar cell structure made it feasible to investigate single field-effect surface passivation because other interference factor could be eliminated, such as interfacial stress, surface defects and inter diffusion. With single field-effect surface passivation scheme, an increment in short-circuit current of Si solar cell from 6.1 mA to 6.37 mA was achieved.
Keywords
chemical interdiffusion; electrolytes; elemental semiconductors; passivation; short-circuit currents; silicon; solar cells; Si; Si solar cell structure; constructing electrolyte; electrolyte-induced extra electrostatic field; electron accumulation layer; inter diffusion; interfacial stress; interference factor; positive gate voltages; short-circuit current; single field-effect surface passivation; surface defects; Electric fields; Electrodes; Equations; Logic gates; Passivation; Photovoltaic cells; Silicon; Short-Circuit Current; extra electric field; single field-effect surface passivation; solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location
Changchun, Jilin
Print_ISBN
978-1-4673-2638-4
Type
conf
DOI
10.1109/ICoOM.2012.6316302
Filename
6316302
Link To Document