• DocumentCode
    3492944
  • Title

    Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure

  • Author

    Liu, W.F. ; Guan, Junzhi ; Bian, J.M. ; Zhao, Yiwen ; Liu, Y.H. ; Zhang, B.Y. ; Liu, A.M.

  • Author_Institution
    Sch. of Physic & Optoelectron. Technol., Dalian Univ. of Technol., Dalian, China
  • fYear
    2012
  • fDate
    23-25 Aug. 2012
  • Firstpage
    407
  • Lastpage
    411
  • Abstract
    The electrolyte/Si solar cell structure is proposed to investigate single field-effect surface passivation. The electrolyte-induced extra electrostatic field under the surface of Si solar cell can be controlled by adjusting voltages between the electrolyte and the surfaces of Si solar cell. Under positive gate voltages, an electron accumulation layer was formed under the electrolyte/Si interface leading to surface passivation of Si solar cell. Our results indicate that the proposed electrolyte/Si solar cell structure made it feasible to investigate single field-effect surface passivation because other interference factor could be eliminated, such as interfacial stress, surface defects and inter diffusion. With single field-effect surface passivation scheme, an increment in short-circuit current of Si solar cell from 6.1 mA to 6.37 mA was achieved.
  • Keywords
    chemical interdiffusion; electrolytes; elemental semiconductors; passivation; short-circuit currents; silicon; solar cells; Si; Si solar cell structure; constructing electrolyte; electrolyte-induced extra electrostatic field; electron accumulation layer; inter diffusion; interfacial stress; interference factor; positive gate voltages; short-circuit current; single field-effect surface passivation; surface defects; Electric fields; Electrodes; Equations; Logic gates; Passivation; Photovoltaic cells; Silicon; Short-Circuit Current; extra electric field; single field-effect surface passivation; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
  • Conference_Location
    Changchun, Jilin
  • Print_ISBN
    978-1-4673-2638-4
  • Type

    conf

  • DOI
    10.1109/ICoOM.2012.6316302
  • Filename
    6316302