A fast switching insulated-gate P-I-N diode controlled thyristor structure

Author

Jun, Cai ; Sin, Johnny K O ; Poon, Vincent M C ; Ng, Wai Tung ; Lai, Peter P T

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1996

fDate

26-28 Nov 1996

Firstpage

122

Lastpage

125

Abstract

A new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm ². However, resistive switching turn-off speed of the IGFDT is approximately 3 times faster than that of the trench BRT

Keywords

MOS-controlled thyristors; current density; p-i-n diodes; power semiconductor switches; semiconductor device models; transient analysis; MEDICI; breakdown characteristics; current density; high power switching; insulated-gate PIN diode controlled thyristor structure; on-state characteristics; resistive switching turn-off speed; transient simulations; turn-off characteristics; two-dimensional numerical simulation; Anodes; Cathodes; Charge carrier processes; Electrons; Insulation; MOSFET circuits; Numerical simulation; P-i-n diodes; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on

Conference_Location

Penang

Print_ISBN

0-7803-3388-8

Type

conf

DOI

10.1109/SMELEC.1996.616467

Filename

616467