DocumentCode :
3492962
Title :
Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection
Author :
Wang, Dongbo ; Jiao, Shujie ; Sun, Sujuan ; Zhao, Liancheng
Author_Institution :
Dept. of Inf. Functional Mater. & Quantum Devices, Harbin Inst. of Technol., Harbin, China
fYear :
2012
fDate :
23-25 Aug. 2012
Firstpage :
412
Lastpage :
416
Abstract :
High crystalline quality Al0.40 In0.02Ga0.58N film has been achieved on GaN buffer by metalorganic vapor phase epitaxy (MOVPE). The metal-semiconductor-metal (MSM) structured visible blind photodetector was fabricated based on the Al0.40 In0.02Ga0.58N film. The current-voltage measurement indicated an obvious Schottky behavior, the barrier height was calculated to be 0.98 e V. With an applied bias of 10 V, the photodetector showed a peak responsivity of 0.065 A/W at 295 nm with a cutoff wavelength at 310 nm. Furthermore, the ultraviolet-visible rejection ratio (R295 nm/R450 nm) was more than two orders of magnitude at 10 V bias. It was also found another response peak at 360 nm corresponding to the band gap of GaN, Which proved our photodetector can be used for dual band detection in ultraviolet region. In addition, it was also found that the slower increased of the responsivity when the |bias| was above 3V was attributed to radiative and Auger recombination.
Keywords :
Auger effect; III-V semiconductors; MOCVD; aluminium compounds; electron-hole recombination; gallium compounds; indium compounds; photodiodes; ultraviolet detectors; vapour phase epitaxial growth; wide band gap semiconductors; AlInGaN; Auger recombination; MOVPE; Schottky behavior; barrier height; current-voltage measurement; dual band detection; metal-semiconductor-metal photodiodes; metalorganic vapor phase epitaxy; radiative recombination; ultraviolet detection; ultraviolet visible rejection ratio; voltage 10 V; wavelength 295 nm; wavelength 310 nm; wavelength 360 nm; Epitaxial growth; Gallium nitride; Metals; Photodetectors; Photonic band gap; Radiative recombination; AlInGaN; Ultraviolet; photodection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
Type :
conf
DOI :
10.1109/ICoOM.2012.6316303
Filename :
6316303
Link To Document :
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