Title :
AlN Contour-Mode Vibrating RF MEMS for Next Generation Wireless Communications
Author :
Piazza, Gianluca ; Stephanou, Philip J. ; Pisano, Albert P.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA
Abstract :
AlN contour-mode vibrating RF MEMS resonator technology is described as capable of low-loss filtering and frequency synthesis for next generation wireless devices. Contour-mode piezoelectric resonators can span frequencies from 10 MHz up to few GHz on the same silicon chip offering high quality factors in air (1,000-4,000) and low motional resistance (25-700 Omega). Low loss (<- 1.5 dB) electrically and mechanically coupled filters and low phase noise oscillators can be easily implemented using this resonator technology. Low power transceiver architectures based on frequency hopping, multi-band filtering and direct frequency synthesis are presented as next generation wireless solutions that will be enabled by this new class of AlN contour-mode resonators
Keywords :
III-V semiconductors; aluminium compounds; band-pass filters; crystal resonators; frequency synthesizers; low-power electronics; micromechanical resonators; radiofrequency oscillators; silicon; transceivers; 25 to 700 ohm; AlN; RF MEMS resonator technology; contour-mode resonators; direct frequency synthesis; electrically coupled filters; frequency hopping; low phase noise oscillators; low power transceiver architectures; mechanically coupled filters; multi-band filtering; piezoelectric resonators; quality factors; silicon chip; wireless communications; Couplings; Electric resistance; Filtering; Frequency synthesizers; Q factor; Radiofrequency microelectromechanical systems; Resonant frequency; Resonator filters; Silicon; Wireless communication;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307638