Title :
Room-temperature, electrically-pumped, multiple-active-region VCSELs with high differential efficiency at 1.55 μm
Author :
Kim, J.K. ; Hall, E. ; Sjölund, O. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We have demonstrated fully-epitaxial, room-temperature, electrically-pumped VCSELs based on III-As compounds with low threshold current density, very high differential efficiency and low threshold voltage by employing multiple-active-regions in a single cavity. Even higher differential efficiencies should be possible with optimized cavity designs. The high differential efficiency and high output powers makes these VCSELs good candidates for low-noise, high-efficiency microwave links. Also, when integrated with a series connected detector, analog repeaters, amplifying wavelength converters, and lossless signal tapping are possible
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; integrated optics; laser beams; laser cavity resonators; laser modes; laser noise; quantum well lasers; semiconductor lasers; surface emitting lasers; 1.55 mum; 298 K; III-As compounds; amplifying wavelength converters; analog repeaters; differential efficiency; fully-epitaxial VCSELs; high differential efficiency; lossless signal tapping; low-noise high-efficiency microwave links; multiple-active-region VCSELs; multiple-active-regions; optimized cavity designs; output powers; room-temperature electrically-pumped VCSELs; series connected detector; single cavity; threshold current density; threshold voltage; Absorption; Distributed Bragg reflectors; Mirrors; Optical losses; Quantum computing; Surface emitting lasers; Temperature; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813517
