AlGaN/GaN MISHFET: A novel alternative to power HFETs for high temperature microwave digital and switching applications

Author

Aggarwal, Ruchika ; Agrawal, Anju ; Gupta, Mridula ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We report high temperature microwave characteristics of AlGaN/GaN MISHFET and present comparative studies of this device with regular HFET structures. The effect of various temperature dependent material parameters are taken into account to evaluate the small signal parameters for wide temperature (25degC < T < 300degC) range. The effect of piezoelectric and spontaneous polarization has also been considered. Our AlGaN/GaN MISHFET structure demonstrates larger drain currents, cut-off frequency and better saturation characteristics at high temperatures. Microwave saturation output power for MISHFET is obtained as 3.8 W/mm relative to 1.4 W/mm for HFET at 300degC.

Keywords

III-V semiconductors; high electron mobility transistors; polarisation; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN MISHFET; cut-off frequency; drain current; high temperature microwave digital application; microwave saturation output power; piezoelectric polarization; power HFET; saturation characteristics; spontaneous polarization; switching application; Aluminum gallium nitride; Cutoff frequency; Gallium nitride; HEMTs; MODFETs; Microwave devices; Piezoelectric polarization; Power generation; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958642

Filename

4958642