TCAD performance investigation of a novel MOSFET architecture of dual material gate insulated shallow extension silicon on nothing (DMG ISE SON) MOSFET for ULSI era

novel architecture of DMG ISE SON MOSFET has been proposed and shown to have a commendable potential to become ultimate device architecture for ULSI era owing to its greater resistance toward self heating effect and with its high performance in terms of S, DIBL and current drivability. The improvement in SCEs is further seen for DMG ISE SON MOSFET with thin channel film.