Circuit Techniques for Organic and Amorphous Semiconductor based Field Effect Transistors

Author

Sambandan, Sanjiv ; Nathan, Arokia

Author_Institution

ECE, Waterloo Univ., Ont.

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

69

Lastpage

72

Abstract

Field effect transistors (FETs) built with non-crystalline semiconductors, such as amorphous hydrogenated silicon (a-Si:H) and organic thin film transistors (TFTs) are of immense interest in the development of large area sensor and display systems (Powell, 1989). However, these FETs have a time variant threshold voltage due to bulk and interfacial charge trapping, and hence, to-date these devices have been mostly used as switches. This paper identifies circuit techniques to enable time invariant transfer characteristics using these devices, thereby enabling versatile analog design

Keywords

amorphous semiconductors; electron traps; field effect transistors; hole traps; hydrogen; organic semiconductors; silicon; thin film transistors; Si:H; amorphous hydrogenated silicon; amorphous semiconductor; charge trapping; circuit techniques; display systems; field effect transistors; large area sensor; noncrystalline semiconductors; organic semiconductor; organic thin film transistors; switches; time variant threshold voltage; versatile analog design; Amorphous materials; Amorphous semiconductors; Circuits; FETs; Organic thin film transistors; Sensor phenomena and characterization; Sensor systems; Silicon; Thin film sensors; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307640

Filename

4099858