Title :
Circuit Techniques for Organic and Amorphous Semiconductor based Field Effect Transistors
Author :
Sambandan, Sanjiv ; Nathan, Arokia
Author_Institution :
ECE, Waterloo Univ., Ont.
Abstract :
Field effect transistors (FETs) built with non-crystalline semiconductors, such as amorphous hydrogenated silicon (a-Si:H) and organic thin film transistors (TFTs) are of immense interest in the development of large area sensor and display systems (Powell, 1989). However, these FETs have a time variant threshold voltage due to bulk and interfacial charge trapping, and hence, to-date these devices have been mostly used as switches. This paper identifies circuit techniques to enable time invariant transfer characteristics using these devices, thereby enabling versatile analog design
Keywords :
amorphous semiconductors; electron traps; field effect transistors; hole traps; hydrogen; organic semiconductors; silicon; thin film transistors; Si:H; amorphous hydrogenated silicon; amorphous semiconductor; charge trapping; circuit techniques; display systems; field effect transistors; large area sensor; noncrystalline semiconductors; organic semiconductor; organic thin film transistors; switches; time variant threshold voltage; versatile analog design; Amorphous materials; Amorphous semiconductors; Circuits; FETs; Organic thin film transistors; Sensor phenomena and characterization; Sensor systems; Silicon; Thin film sensors; Thin film transistors;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307640
