Title :
Buried triple p-n junction structure in a BiCMOS technology for color detection
Author :
Choulkha, M.B. ; Lu, G.N. ; Sedjil, M. ; Sou, G. ; Atquie, G.
Author_Institution :
Lab. des Instrum. et Syst., Univ. Pierre et Marie Curie, Paris, France
Abstract :
A buried triple p-n junction structure in a BiCMOS process was investigated for color detection. A physically based model of the BTJ structure was developed. A color sensing chip was designed and fabricated. Measurements, simulations as well as colorimetric characterization were performed
Keywords :
BiCMOS integrated circuits; BTJ structure; BiCMOS technology; buried triple p-n junction structure; color detection; color sensing chip; colorimetric characterization; physically based model; BiCMOS integrated circuits; Color; Detectors; Fabrication; Image color analysis; Instruments; Optical filters; Optical surface waves; P-n junctions; Performance evaluation; Semiconductor device measurement; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647408
