Title :
The efficiency of class-F and inverse class-F amplifiers
Author :
Inoue, Akira ; Ohta, Akira ; Goto, Seiki ; Ishikawa, Takahide ; Matsuda, Yoshio
Author_Institution :
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The efficiency of class-F and inverse class-F amplifiers are studied using measurements and theories. At high quiescent current, inverse class-F amplifiers show higher efficiency than that of class-F. This phenomenon is experimentally ensured with GaAs pHEMTs and GaAs HBTs. A harmonic balanced simulation also supports this result, and reveals the difference between the classes. An analytic waveform analysis with restricted harmonics explains this dependence on the quiescent currents.
Keywords :
III-V semiconductors; electric current; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; power amplifiers; semiconductor device measurement; waveform analysis; FET; GaAs; harmonic balanced simulation; heterojunction bipolar transistor; inverse class-F amplifier; pHEMT; power amplifier; quiescent current; restricted harmonics; waveform analysis; Current measurement; FETs; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; PHEMTs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338991
