Title :
Electrical properties of ZnSe Langmuir-Blodgett film MIS devices
Author :
Das-Gupta, D.K. ; Townshend, P. ; Williams, J.O. ; Mayers, F.R. ; Luk, S. ; Maung, N.
Author_Institution :
Sch. of Electron. Eng. Sci., Univ. Coll. of North Wales, Bangor, UK
Abstract :
A typical set of current-voltage characteristics of an Au-GaAs-ZnSe-Au device in the temperature range of -23.5 to 53°C is presented. It is demonstrated that the conduction mechanism in sandwich structures of Au-GaAs-ZnSe-Au is electrode limited, the Schottky barrier being lowered at the interface. This barrier has been observed to be nonideal, possible due to the presence of interface states at the ZnSe surface
Keywords :
Langmuir-Blodgett films; Schottky effect; gallium arsenide; gold; interface electron states; metal-insulator-semiconductor devices; zinc compounds; -23.5 to 53 degC; Au-GaAs-ZnSe-Au device; Langmuir-Blodgett film MIS devices; Schottky barrier; conduction mechanism; current-voltage characteristics; interface states; sandwich structures; Current-voltage characteristics; Gallium arsenide; Light emitting diodes; MIS devices; Mechanical factors; Semiconductor films; Silicon compounds; Substrates; Temperature distribution; Zinc compounds;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on
Conference_Location :
Ottawa, Ont.
DOI :
10.1109/CEIDP.1988.26333
