Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor

Author

Jha, S.K. ; Surya, C. ; Chen, K.J. ; Lau, K.M.

Author_Institution

Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ.

fYear

2006

fDate

Sept. 2006

Firstpage

105

Lastpage

108

Abstract

Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies E_a = 140 meV, E_b= 188 meV and E_c = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 times 10^-4) at room temperature in addition to superior transistor characteristics. The device performance compares favorably to the similar single channel devices. The results show that the devices may have good potential for applications in low phase noise high frequency electronic systems

Keywords

III-V semiconductors; MOCVD; aluminium compounds; electron-hole recombination; gallium compounds; high electron mobility transistors; sapphire; semiconductor device noise; wide band gap semiconductors; 140 meV; 188 meV; 201 meV; AlGaN-GaN; Hooge parameter; MOCVD; dual channel high electron mobility transistor; generation recombination noise; low phase noise high frequency electronic systems; sapphire substrate; single channel devices; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MODFETs; Noise generators; Optical microscopy; Plasma temperature; Spontaneous emission; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307649

Filename

4099867