Title :
Reliability of 0.98-1.02 μm InGaAs laser diodes-improvement by low temperature growth of active layer
Author :
Nozawa, H. ; Sasaki, T. ; Amano, C. ; Temmyo, J. ; Muñoz, E.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
InGaAs strained-quantum-well (QW) laser diodes (LDs) cover the lasing wavelength from 0.9 to 1.1 μm and are important pumping sources for fiber amplifiers. The 0.98-μm LD has become a key device for pumping erbium-doped fiber amplifiers in 1.5-μm wavelength-division-multiplexing (WDM) transmission systems. Highly reliable operation was achieved for 0.98 μm LDs by oxidation free facet passivation
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser reliability; laser transitions; passivation; quantum well lasers; semiconductor device reliability; semiconductor growth; vapour phase epitaxial growth; wavelength division multiplexing; 0.98 to 1.02 mum; 0.98-μm LD; 1.5-μm wavelength-division-multiplexing; InGaAs; InGaAs laser diodes; InGaAs strained QW laser diode reliability; active layer; fiber amplifiers; ighly reliable operation; low temperature growth; oxidation free facet passivation; pumping sources; Diode lasers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Indium gallium arsenide; Laser excitation; Optical fiber devices; Oxidation; Passivation; Pump lasers; Wavelength division multiplexing;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813547
