Title :
Degradation of proton implanted VCSEL´s due to electrostatic discharge pulses
Author :
Neitzert, H.C. ; Gobbi, B.
Author_Institution :
Dipt. di Elettronica, Salerno Univ., Italy
Abstract :
We performed step-stress human body model electrostatic discharge tests both under fonvard and under reverse bias conditions with the ESD pulse amplitude increasing in 50 V steps. In the case of the VCSEL forward bias stress also the resulting optical emission transients during the ESD tests have been measured using a fast photodiode
Keywords :
electrostatic discharge; ion implantation; optical testing; photodiodes; semiconductor device testing; surface emitting lasers; 10 mA; ESD pulse amplitude; VCSEL forward bias stress; electrostatic discharge pulses; fast photodiode; optical emission transients; proton implanted VCSEL; step-stress human body model electrostatic discharge tests; Biological system modeling; Degradation; Electrostatic discharge; Humans; Optical pulses; Performance evaluation; Protons; Stress; Testing; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813549