Author :
Tai, K. ; Hirano, T. ; Yamaguchi, S. ; Ando, T. ; Hiyama, S. ; Wang, J. ; Nagahama, Y. ; Kato, T. ; Yamanaka, M. ; Terauchi, S. ; Kanda, S. ; Yamamoto, R. ; Tateshita, Y. ; Tagawa, Y. ; Iwamoto, H. ; Saito, M. ; Nagashima, N. ; Kadomura, S.
Abstract :
We have developed a high performance pMOSFET with ALD-TiN/HfO2 gate stacks on (110) substrate using gate last process at low temperature. High work function and low gate leakage current are obtained. An extremely high mobility equivalent to P+poly-Si/SiO2 on (110) substrate (171 cm2/Vs at 0.5 MV/cm) is achieved with ALD-TiN/HfO2 on (110) substrate in the thinner Tinv region of 1.7 nm. Vth roll-off characteristics are well controlled down to 50 nm. A high drive current of 380 uA/um at I off = 1 uA/um is achieved at Vdd = 1.0 V. The drive current of ALD-TiN/HfO2 gate stack on (110) substrate is improved 1.4 times compared with (100) substrate and 2.4 times compared with P+poly-Si/SiO2 on (100) substrate
Keywords :
MOSFET; atomic layer deposition; hafnium compounds; leakage currents; silicon compounds; substrates; tin compounds; (100) substrate; (110) substrate; 1 V; 1.7 nm; 50 nm; ALD; Si-SiO2; TiN-HfO2; leakage current; low temperature process; pMOSFET; work function; Annealing; CMOS technology; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Substrates; Temperature; Tin;
