Thermally grown fatty acid films on semiconductors

Author

Agarwal, V.K. ; Lin, Fey ; Smith, R.B.

Author_Institution

Dept. of Phys. & Astron., Moorhead State Univ., MN, USA

fYear

1988

fDate

16-20 Oct 1988

Firstpage

208

Lastpage

213

Abstract

The authors report preliminary results on the capacitance versus voltage (C-V) characteristics of MIS devices containing thermally grown fatty-acid films as insulators. A comparative study is carried out between the C-V plots of devices with Si-SiO₂ and with Si-SiO ₂-fatty-acid film interfaces. The authors also discuss results on the DC breakdown behavior of these films in metal-insulator-metal type devices. If the films are annealed thermally or electrically after deposition, their breakdown fields are significantly higher than those on unannealed (as-grown) films. It is believed that the annealing reduces the density of defects in these films leading to higher breakdown fields

Keywords

capacitance; electric breakdown of solids; electronic conduction in insulating thin films; elemental semiconductors; metal-insulator-semiconductor devices; organic compounds; silicon; silicon compounds; C-V plots; DC breakdown; MIS devices; Si-SiO₂; annealing; density of defects; semiconductors; thermally grown fatty-acid films; Aluminum; Annealing; Electric breakdown; Electrodes; Insulation; MIM devices; Monitoring; Plasma temperature; Semiconductor films; Semiconductor thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on

Conference_Location

Ottawa, Ont.

Type

conf

DOI

10.1109/CEIDP.1988.26334

Filename

26334