Title :
Thermally grown fatty acid films on semiconductors
Author :
Agarwal, V.K. ; Lin, Fey ; Smith, R.B.
Author_Institution :
Dept. of Phys. & Astron., Moorhead State Univ., MN, USA
Abstract :
The authors report preliminary results on the capacitance versus voltage (C-V) characteristics of MIS devices containing thermally grown fatty-acid films as insulators. A comparative study is carried out between the C-V plots of devices with Si-SiO2 and with Si-SiO 2-fatty-acid film interfaces. The authors also discuss results on the DC breakdown behavior of these films in metal-insulator-metal type devices. If the films are annealed thermally or electrically after deposition, their breakdown fields are significantly higher than those on unannealed (as-grown) films. It is believed that the annealing reduces the density of defects in these films leading to higher breakdown fields
Keywords :
capacitance; electric breakdown of solids; electronic conduction in insulating thin films; elemental semiconductors; metal-insulator-semiconductor devices; organic compounds; silicon; silicon compounds; C-V plots; DC breakdown; MIS devices; Si-SiO2; annealing; density of defects; semiconductors; thermally grown fatty-acid films; Aluminum; Annealing; Electric breakdown; Electrodes; Insulation; MIM devices; Monitoring; Plasma temperature; Semiconductor films; Semiconductor thin films;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on
Conference_Location :
Ottawa, Ont.
DOI :
10.1109/CEIDP.1988.26334
