Title :
Statistical characterization and the impact of percent phosphorous in LTO-PSG film on opto and small signal technology
Author :
Warner, Don ; Tanghal, Eileen ; Sundaram, Sam
Author_Institution :
Opto & Small Signal Products Div., Motorola Inc., Phoenix, AZ, USA
Abstract :
The physical and chemical effects and particularly the impact of Phosphosilicate glass (LTO-PSG) composition on manufacturing of Opto and Small Signal devices is reviewed in detail. Statistical design and response surface methodology (RSM) are extensively used to optimize the process conditions of PSG film for reliable fabrication of these devices. This paper focuses on LTO-PSG deposition variables and how the deposition conditions can be optimized for the best process conditions. Finally, the effect of percentage of Phosphorous in LTO-PSG is discussed in terms of photolithography etch process simplification
Keywords :
chemical vapour deposition; design of experiments; etching; oxidation; phosphosilicate glasses; photolithography; phototransistors; semiconductor technology; silicon compounds; size control; surface fitting; CVD; LTO-PSG film; P percentage effect; P2O5-SiO2; PSG; PSG composition; SiO2; critical dimension control; deposition variables; low temperature oxide; opto-transistors; photolithography etch process simplification; process conditions optimization; reliable fabrication; response surface methodology; small signal technology; statistical design; Chemical products; Chemical technology; Design optimization; Etching; Fabrication; Fluid flow; Glass; Manufacturing processes; Signal processing; Temperature;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616469
