DocumentCode :
3493368
Title :
Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
Author :
Dimoulas, A. ; Panayiotatos, Y. ; Sotiropoulos, A. ; Tsipas, P. ; Brunco, D.P. ; Nicholas, G. ; Van Steenbergen, J. ; Bellenger, F. ; Houssa, M. ; Caymax, M. ; Meuris, M.
Author_Institution :
Inst. of Mater. Sci., NCSR Demokritos, Athens
fYear :
2006
fDate :
Sept. 2006
Firstpage :
142
Lastpage :
145
Abstract :
Long channel Ge FETs and capacitors with CeO2/HfO2 /TiN gates were fabricated by photolithography and gate wet etch. Rare earth CeO2 in direct contact with Ge was used as a passivating layer producing lowest Dit values in the mid 10 11 eV-1cm2 range. HfO2 cap reduces leakage and improves equivalent oxide thickness scaling of the whole gate stack. The p-FETs show exceptionally high ION/I OFF ratio ~106, mainly due to low off current, and peak channel mobility around 80 cm2/Vs. The n-FETs, although functional, show inferior performance producing on currents an order of magnitude lower compared to p-FETs
Keywords :
capacitors; cerium compounds; etching; field effect transistors; germanium; hafnium compounds; passivation; photolithography; titanium compounds; CeO2-HfO2-TiN; Ge; capacitors; leakage reduction; long channel FET; oxide thickness scaling improvement; passivating layer; rare earth gate; Annealing; Capacitors; Dielectric substrates; Etching; FETs; Germanium; Hafnium oxide; Hydrogen; Lithography; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
ISSN :
1930-8876
Print_ISBN :
1-4244-0301-4
Type :
conf
DOI :
10.1109/ESSDER.2006.307658
Filename :
4099876
Link To Document :
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