DocumentCode :
3493377
Title :
New TIT Capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs
Author :
Ho Jin Cho ; Young Dae Kim ; Dong Su Park ; Lee, Euna ; Cheol Hwan Park ; Jun Soo Jang ; Keum Bum Lee ; Hai Won Kim ; Soo Jin Chae ; Young Jong Ki ; Il Keun Han ; Yong Wook Song
Author_Institution :
R & D Div., Hynix Semicond. Inc., Icheon
fYear :
2006
fDate :
19-21 Sept. 2006
Firstpage :
146
Lastpage :
149
Abstract :
New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was successfully developed for DRAM capacitor dielectrics of 60nm and below technologies. ZAZ dielectric film grown by ALD has a mixture structure of crystalline phase ZrO2 and amorphous phase Al2O3 in order to optimize dielectric properties. ZAZ TIT capacitor showed small Tox.eq of 8.5 Aring and low leakage current density of 0.35fA/cell, which meet leakage current criteria of 0.5fA/cell for mass production. ZAZ TIT capacitor showed smaller cap leak fail bit than HAH capacitor and stable leakage current up to 550degC anneal. TDDB (time dependent dielectric breakdown) behavior reliably satisfied the 10-year lifetime criteria within operation voltage range
Keywords :
DRAM chips; aluminium compounds; dielectric thin films; electric breakdown; thin film capacitors; zirconium compounds; 60 nm; DRAM capacitor dielectrics; TIT capacitor; ZAZ; ZrO2-Al2O3-ZrO2; dielectric film; stable leakage current; time dependent dielectric breakdown; Aluminum oxide; Amorphous materials; Annealing; Capacitors; Crystallization; Dielectric breakdown; Dielectric films; Leakage current; Mass production; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
ISSN :
1930-8876
Print_ISBN :
1-4244-0301-4
Type :
conf
DOI :
10.1109/ESSDER.2006.307659
Filename :
4099877
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3493377
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