Title :
Processing and characterization of a GaAs/AlxOy quasi-three-dimensional photonic bandgap material
Author :
Zhou, W.D. ; Bhattacharya, P. ; Sabarinathan, J. ; Zhu, D.H. ; Saber Hehny, A. ; Marsh, J.H.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We report a relatively simple technique to realize a GaAs-based quasi-3D photonic bandgap (PBG) material with an index contrast of ~2, in which a single epitaxial growth and impurity-induced layer disordering and wet oxidation steps are used. We have made transmission measurement on the fabricated PBG material and observed a stop band, which is consistent with the theoretical results. We have also made direct measurement of the electro-optic coefficients in the PBG medium
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; electro-optical effects; gallium arsenide; molecular beam epitaxial growth; oxidation; photonic band gap; refractive index; semiconductor growth; semiconductor quantum wells; AlGaAs; GaAs-AlO; GaAs/AlxOy; MBE; MQW intermixing; electro-optic coefficients; impurity-induced layer disordering; index contrast; light transmission; quasi-3D photonic bandgap material; selective area diffusion; single epitaxial growth; stop band; wet oxidation; Gallium arsenide; Light scattering; Molecular beam epitaxial growth; Optical materials; Oxidation; Particle scattering; Photonic band gap; Quantum well devices; Refractive index; Solid state circuits;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813566
