Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics

Author

Gottlob, H.D.B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J.K. ; Wahlbrink, T. ; Lemme, M.C. ; Kurz, H. ; Endres, R. ; Stefanov, Y. ; Schwalke, U. ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H.J.

Author_Institution

Adv. Microelectron. Center Aachen, AMO GmbH, Aachen

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

150

Lastpage

153

Abstract

Two process concepts for integration of novel gate stacks with epitaxial high-k dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd ₂O₃ gate stack. Furthermore MOSFETs with W/Gd₂O₃ gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages

Keywords

CMOS integrated circuits; MOSFET; gadolinium compounds; high-k dielectric thin films; semiconductor technology; silicon-on-insulator; titanium compounds; tungsten; CMOS integration; MOSFET; TiN-Gd₂O₃; W-Gd₂O₃; crystalline high-K dielectric integration; damascene metal gate; epitaxial high-k dielectrics; gate first process; gate stack integration; metal gate electrodes; ultra thin SOI material; CMOS technology; Crystallization; Dielectric materials; Electrodes; Fabrication; High K dielectric materials; High-K gate dielectrics; MOSFETs; Molecular beam epitaxial growth; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307660

Filename

4099878