Simulation study of single event effect for different N-well and Deep-N-well doping in 65nm triple-well CMOS devices

Author

Wang, Tianqi ; Xiao, Liyi ; Huang, Qingfeng

Author_Institution

Micro-Electron. Center, Harbin Inst. of Technol., Harbin, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

505

Lastpage

509

Abstract

In this paper, single event effect (SEE) for different N-well and Deep N-well doping in triple-well process is studied by TCAD simulations. Charge collection in combinational circuits and charge sharing in SRAM cells are discussed in 65 nm triple-well CMOS technology. The results showed that devices with different doping have different ability of charge collection and charge sharing. Heavy ion strike induce single transistor DoublePulses are observed, for the doping of 1×10¹⁸ cm^-3 and 5×10¹⁸ cm^-3. Single event upset (SEU) recovery is also discussed for different doping in SRAM cells.

Keywords

CMOS integrated circuits; SRAM chips; combinational circuits; semiconductor doping; SRAM cells; TCAD simulations; charge collection; charge sharing; combinational circuits; deep-N-well doping; heavy ion strike; single event effect; single event upset recovery; single transistor double pulses; size 65 nm; triple-well CMOS devices; CMOS integrated circuits; Doping; MOS devices; Random access memory; Semiconductor device modeling; Semiconductor process modeling; Single event upset; DP(double pulse); SEU recovery; TCAD; charge collection; doping density; triple-well;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316326

Filename

6316326