DocumentCode
3493456
Title
A high isolation series-shunt photoconductive switching circuit
Author
Draskovic, Drazen ; Fernandez, J.R.O. ; Briso-Rodriguez, Cesar
Author_Institution
Univ. Politec. de Madrid, Madrid, Spain
fYear
2012
fDate
11-14 Sept. 2012
Firstpage
224
Lastpage
227
Abstract
This paper presents a wide band compact high isolation silicon switching circuit, which is based on the series-shunt switch design with three silicon switches made of diced high resistivity silicon wafer placed over a microstrip gap and activated by 808nm near-infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz.
Keywords
microstrip circuits; photoconducting switches; semiconductor lasers; switching circuits; diced high resistivity silicon wafer; frequency 2 GHz; high isolation series-shunt photoconductive switching circuit; loss 1.2 dB; loss 44.8 dB; microstrip gap; near-infrared laser diodes; series-shunt switch design; silicon switches; size 808 nm; wide band compact high isolation silicon switching circuit; Masers; Microwave circuits; Microwave photonics; Optical switches; Silicon; Switching circuits; Microswitches; microwave technology; optical switches; photoconducting devices; switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics (MWP), 2012 International Topical Meeting on
Conference_Location
Noordwijk
Print_ISBN
978-1-4673-2863-0
Type
conf
DOI
10.1109/MWP.2012.6474097
Filename
6474097
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