Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections

In this paper, two Monte-Carlo simulators implementing different models of the influence of carrier quantization on the electrostatics and transport are applied to sub-100nm double-gate SOI devices. To this purpose a new stable and efficient scheme to implement the contacts in the simulation of DG SOI devices is introduced first. Then, results in terms of drain current and microscopic quantities are compared, providing a comparison between a well assessed semiclassical tool and a more rigorous multi-subband code