Title :
Detection of an organophosphorus compound with a supported metallic island film
Author :
Kolesar, Edward S., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
An investigation was conducted of the electronic properties modified by the exposure of a supported island film of copper+cuprous oxide to low concentrations (1-650 p.p.m.) of diisopropyl methylphosphonate (DIMP) and of the merit of integrating these films with a distributed RC notch network detection device. Electron microscopy and diffraction measurements confirmed the film´s structure and composition; Auger spectroscopy verified the absorption of DIMP. DIMP exposure sensitivity is maximized for films with thicknesses less than 80 AA operated at 90 degrees C which have an applied direct current bias greater than 10 V. The absorption of DIMP is quasi-reversible.<>
Keywords :
electrochemical analysis; organic compounds; 90 degC; Auger spectroscopy; diisopropyl methylphosphonate; distributed RC notch network detection device; electron microscopy; electronic properties; supported metallic island film;
Conference_Titel :
Engineering in Medicine and Biology Society, 1988. Proceedings of the Annual International Conference of the IEEE
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-0785-2
DOI :
10.1109/IEMBS.1988.95049
