Linear power amplifier based on 3-way Doherty amplifier with predistorter

Author

Shin, Bumjae ; Cha, Jeonghyeon ; Kim, Jangheon ; Woo, Y.Y. ; Yi, Jaehyok ; Kim, Bumman

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Kyoungbuk, South Korea

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

2027

Abstract

This paper presents a 3-way Doherty amplifier with predistorter (PD) for a repeater application. It is implemented using three 60 Watts PEP silicon LDMOSFETs and tested using two-tone and one- and two-carrier down-link WCDMA signals. For the two-carrier downlink WCDMA signal, the amplifier provides -49.1 dBc adjacent-channel-leakage-ratio (ACLR) and 10.3% power-added efficiency (PAE) at an output power 40 dBm which is an improvement of 8.5 dBc in linearity and 2% in efficiency compared to a similar class-AB amplifier.

Keywords

microwave amplifiers; power MOSFET; power amplifiers; 3-way Doherty amplifier; 60 W; PEP silicon LDMOSFET; adjacent-channel-leakage-ratio; class-AB amplifier; linear power amplifier; one-carrier downlink WCDMA signal; power-added efficiency; predistorter; repeater application; two-carrier downlink WCDMA signal; two-tone WCDMA signals; Circuits; Impedance; Linearity; Microwave amplifiers; Multiaccess communication; Operational amplifiers; Power amplifiers; Predistortion; Repeaters; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339011

Filename

1339011