DocumentCode :
3493507
Title :
Optimization of ESD protection device using SCR structure of a novel STI-sided LDMOS with P-top layer for 5 V operating voltage
Author :
Hapsari, Emita Yulia ; Kumar, Ajit ; Kumar, Ankit ; Yang, Shao-Ming ; Sheu, Gene
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
fYear :
2012
fDate :
23-25 Aug. 2012
Firstpage :
524
Lastpage :
528
Abstract :
In this paper, comparison between original and Silicon Controlled Rectifier (SCR) structure of a novel Shallow Trench Isolation (STI)-sided LDMOS with P-top layer is firstly presented. SCR structure can be used as a robust Electrostatic Discharge (ESD) protection device as its failure current (It2) is five times higher compared to original structure. This high It2 also results in optimizing of device width as the hot spot area is wider. The low holding voltage (Vh) of SCR structure is optimized by increasing the doping concentration of P-Body to minimize the risk of induced latch-up. The modification of surface doping concentration is the best way to increase the Vh as the crowded current of SCR structure is placed under the channel and source region while maintaining It2 below ESD thermal failure.
Keywords :
doping profiles; electrostatic discharge; isolation technology; optimisation; power MOSFET; thyristor applications; thyristors; ESD protection device; ESD thermal failure; P-top Layer; SCR structure; STI-sided LDMOS; channel region; crowded current; failure current; holding voltage; latch-up; optimization; risk minimization; robust electrostatic discharge protection device; shallow trench isolation-sided LDMOS; silicon controlled rectifier structure; source region; surface doping concentration; voltage 5 V; Doping; Electrostatic discharges; Lattices; Microelectronics; Stress; Thyristors; Transistors; STI-sided LDMOS; electrostatic discharge; silicon controlled rectifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
Type :
conf
DOI :
10.1109/ICoOM.2012.6316330
Filename :
6316330
Link To Document :
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